NEZ4450-4D Datasheet PDF (4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET)

NEZ4450-4D - 4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET

Description

The NEZ Series of microwave power GaAs FETs offer high output power, high gain and high efficiency at C-band for microwave and satellite communications.

Internal input and output circuits matched to 50 Ω are designed to provide good flatness of gain and output power in allocated band.

Features

Internally matched to 50 Ω.
High power output.
High linear gain.
High reliability.
Low distortion Document No. P10981EJ1V0DS00 (1st edition) Date Published June 1996 P Printed in Japan © 1996 4W/8W C-BAND POWER-GaAs FET NEZ Series.

Datasheet Details

Part number	NEZ4450-4D
Manufacturer	NEC
File Size	108.80 KB
Description	4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
Datasheet	NEZ4450-4D Datasheet
Additional preview pages of the NEZ4450-4D datasheet.

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Full PDF Text Transcription

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PRELIMINARY DATA SHEET GaAs MES FET 4W/8W C-BAND POWER GaAs FET NEZ Series 4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NEZ Series of microwave power GaAs FETs offer high output power, high gain and high efficiency at C-band for microwave and satellite communications. Internal input and output circuits matched to 50 Ω are designed to provide good flatness of gain and output power in allocated band. To reduce the thermal resistance, the device has a PHS (Plated Heat Sink) structure. NEC’s strigent quality assurance and test procedures guarantee the highest reliability and performance. PACKAGE DIMENSIONS (unit: mm) 0.5±0.1 2.5MIN. C1.5 4PLACES SOURCE R1.6 2PLACES GATE 2.4 12.9±0.2 3.2 6.45±0.05 DRAIN 17.0±0.2 21.0±0.3 10.7 2.5MIN.

Published: May 7, 2005 |