Datasheet4U Logo Datasheet4U.com

NEZ5964-15D - 15 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET

Description

The NEZ Series of microwave power GaAs FETs offer high output power, high gain and high efficiency at C-band for microwave and satellite communications.

Internal input and output circuits matched to 50 Ω are designed to provide good flatness of gain and output power in allocated band.

Features

  • Internally matched to 50 Ω.
  • High power output.
  • High linear gain.
  • High reliability.
  • Low distortion Document No. P10982EJ1V0DS00 (1st edition) Date Published June 1996 P Printed in Japan © 1996 15 W C-BAND Po GaAs FET NEZ SERIES NEZ-15D/15DD.

📥 Download Datasheet

Datasheet Details

Part number NEZ5964-15D
Manufacturer NEC
File Size 69.10 KB
Description 15 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
Datasheet download datasheet NEZ5964-15D Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
NEZ1414-2A Microwave GaAs Power FET NEC Electronics
NEZ1414-4A (NEZ1414-2A-4A-6A) Microwave GaAs Power FET NEC Electronics
NEZ1414-6A (NEZ1414-2A-4A-6A) Microwave GaAs Power FET NEC Electronics
NEZB104Z5.5V13.5X7.5F Memory Back-Up Capacitors NIC
NEZB105Z5.5V21.5X8F Memory Back-Up Capacitors NIC

Other Datasheets by NEC

Part Number Description
NEZ5964-15DD 15 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
NEZ5964-4D 4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
NEZ5964-4DD 4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
NEZ5964-8D 4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
NEZ5964-8DD 4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PRELIMINARY DATA SHEET GaAs MES FET 15 W C-BAND POWER GaAs FET NEZ SERIES 15 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NEZ Series of microwave power GaAs FETs offer high output power, high gain and high efficiency at C-band for microwave and satellite communications. Internal input and output circuits matched to 50 Ω are designed to provide good flatness of gain and output power in allocated band. To reduce the thermal resistance, the device has a PHS (Plated Heat Sink) structure. NEC’s strigent quality assurance and test procedures guarantee the highest reliability and performance. PACKAGE DIMENSIONS (unit: mm) 0.5 ±0.1 2.5 MIN. C1.0 4PLACES R1.2 4PLACES SOURCE GATE 2.4 5.6 17.4 ±0.2 8.0 ±0.1 DRAIN 20.4 ±0.2 2.5 MIN.
Published: |