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NP15P04SLG - MOS FIELD EFFECT TRANSISTOR

General Description

The NP15P04SLG is P-channel MOS Field Effect Transistor designed for high current switching applications.

Key Features

  • Super low on-state resistance RDS(on)1 = 40 mΩ MAX. (VGS =.
  • 10 V, ID =.
  • 7.5 A) RDS(on)2 = 60 mΩ MAX. (VGS =.
  • 4.5 V, ID =.
  • 7.5 A).
  • Low input capacitance Ciss = 1100 pF TYP.
  • Built-in gate protection diode (TO-252).

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET MOS FIELD EFFECT TRANSISTOR NP15P04SLG SWITCHING P-CHANNEL POWER MOSFET DESCRIPTION The NP15P04SLG is P-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP15P04SLG-E1-AY Note NP15P04SLG-E2-AY Note LEAD PLATING Pure Sn (Tin) PACKING Tape 2500 p/reel Note Pb-free (This product does not contain Pb in external electrode.) PACKAGE TO-252 (MP-3ZK) FEATURES • Super low on-state resistance RDS(on)1 = 40 mΩ MAX. (VGS = −10 V, ID = −7.5 A) RDS(on)2 = 60 mΩ MAX. (VGS = −4.5 V, ID = −7.5 A) • Low input capacitance Ciss = 1100 pF TYP.