NEC NP160N04TUG
The NP160N04TUG is N-channel MOS Field Effect Transistor designed for high current switching applications.| Part No. | NP160N04TUG |
|---|---|
| Datasheet | NP160N04TUG Download |
| Manufacturer |  NEC |
| Description | SWITCHING N-CHANNEL POWER MOS FET |
| Buy | Stock & Price |
DESCRIPTION
ORDERING INFORMATION PART NUMBER NP160N04TUG-E1-AY NP160N04TUG-E2-AY Note Note LEAD PLATING Pure Sn (Tin) PACKING Tape 800 p/reel PACKAGE TO-263-7pin (MP-25ZT) typ. 1.5 g Note Pb-free (This product does not contain Pb in the external electrode).FEATURES
● Super low on-state resistance RDS(on) = 1.6 mΩ TYP. / 2.0 mΩ MAX. (VGS = 10 V, ID = 80 A)● High Current Rating ID(DC) = ±160 A (TO-263-7pin)
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg 40 ±20 ±160 ±640 220 1.8 175 −55 to +175 372 61 372 V V A A W W °C °C mJ A mJ Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Single Avalanche Energy Note2 Note3 Note3 EAS IAR EAR Repetitive Avalanche Current Repetitive Avalanche Energy Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = 20 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 μH 3.
