NEC NP32N055ILE
The information in this document is subject to change without notice.| Part No. | NP32N055ILE |
|---|---|
| Datasheet | NP32N055ILE Download |
| Manufacturer |  NEC |
| Description | N-Channel Power MOSFET |
| Buy | Stock & Price |
DESCRIPTION
These products are N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP32N055HLE NP32N055ILE PACKAGE TO-251 TO-252FEATURES
● Channel temperature 175 degree rated● Super low on-state resistance RDS(on)1 = 24 mΩ MAX. (VGS = 10 V, ID = 16 A) RDS(on)2 = 29 mΩ MAX. (VGS = 5.0 V, ID = 16 A)
● Low Ciss : Ciss = 1300 pF TYP.
● Built-in gate protection diode (TO-251) DataShee
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C) DataSheet4U.com Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) Note1 Total Power Dissipation (TA = 25°C) Total Power Dissipation (TC = 25°C) Single Avalanche Current Note2 VDSS VGSS ID(DC) ID(pulse) PT PT IAS EAS Tch Tstg 55 ±20 ±32 ±100 1.2 66 28 / 21 / 8 7.8 / 44 / 64 175 –55 to +175 V V A A W W A mJ °C °C (TO-252) Single Avalanche Energy Note2 Channel Temperature Storage Temperature Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1 % 2. Starting Tch = 25°C, RG = 25 Ω , VGS...
