NP32N055ILE Overview
Description
These products are N-channel MOS Field Effect Transistor designed for high current switching applications.
Key Features
- Channel temperature 175 degree rated
- Super low on-state resistance RDS(on)1 = 24 mΩ MAX. (VGS = 10 V, ID = 16 A) RDS(on)2 = 29 mΩ MAX. (VGS = 5.0 V, ID = 16 A)
- Low Ciss : Ciss = 1300 pF TYP
- Built-in gate protection diode (TO-251) DataShee
