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NP32N055ILE - N-Channel Power MOSFET

Download the NP32N055ILE datasheet PDF. This datasheet also covers the NP32N055HLE variant, as both devices belong to the same n-channel power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

These products are N-channel MOS Field Effect Transistor designed for high current switching applications.

Key Features

  • Channel temperature 175 degree rated.
  • Super low on-state resistance RDS(on)1 = 24 mΩ MAX. (VGS = 10 V, ID = 16 A) RDS(on)2 = 29 mΩ MAX. (VGS = 5.0 V, ID = 16 A).
  • Low Ciss : Ciss = 1300 pF TYP.
  • Built-in gate protection diode (TO-251) DataShee.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (NP32N055HLE_NEC.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by NEC (now Renesas Electronics)

Part Number Description
NP32N055IDE N-Channel Power MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com DATA SHEET MOS FIELD EFFECT TRANSISTOR NP32N055HLE, NP32N055ILE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION These products are N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP32N055HLE NP32N055ILE PACKAGE TO-251 TO-252 FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 24 mΩ MAX. (VGS = 10 V, ID = 16 A) RDS(on)2 = 29 mΩ MAX. (VGS = 5.0 V, ID = 16 A) • Low Ciss : Ciss = 1300 pF TYP. • Built-in gate protection diode (TO-251) DataShee ABSOLUTE MAXIMUM RATINGS (TA = 25°C) DataSheet4U.