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NP80N06PLG - MOSFET

This page provides the datasheet information for the NP80N06PLG, a member of the NP80N06MLG MOSFET family.

Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples.

You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment.

Features

  • Logic level.
  • Built-in gate protection diode.
  • Super low on-state resistance - NP80N06MLG, NP80N06NLG RDS(on)1 = 8.6 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 13.3 mΩ MAX. (VGS = 4.5 V, ID = 35 A) - NP80N06PLG RDS(on)1 = 8.3 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 13 mΩ MAX. (VGS = 4.5 V, ID = 35 A).
  • High current rating ID(DC) = ±80 A.
  • Low input capacitance Ciss = 4600 pF TYP.
  • Designed for automotive.

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Datasheet Details

Part number NP80N06PLG
Manufacturer NEC
File Size 452.69 KB
Description MOSFET
Datasheet download datasheet NP80N06PLG Datasheet
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To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Renesas Electronics website: http://www.renesas.com April 1st, 2010 Renesas Electronics Corporation Issued by: Renesas Electronics Corporation (http://www.renesas.com) Send any inquiries to http://www.renesas.com/inquiry. http://www.Datasheet4U.com Notice 1. All information included in this document is current as of the date this document is issued.
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