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NP82N055MUG - N-CHANNEL POWER MOS FET

General Description

The NP82N055MUG and NP82N055NUG are N-channel MOS Field Effect Transistors designed for high current switching applications.

Key Features

  • Non logic level.
  • Super low on-state resistance RDS(on) = 6.0 mΩ MAX. (VGS = 10 V, ID = 41 A).
  • High current rating ID(DC) = ±82 A.
  • Low input capacitance Ciss = 6400 pF TYP.
  • Designed for automotive.

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Full PDF Text Transcription for NP82N055MUG (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for NP82N055MUG. For precise diagrams, and layout, please refer to the original PDF.

DATA SHEET MOS FIELD EFFECT TRANSISTOR NP82N055MUG, NP82N055NUG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP82N055MUG and NP82N055NUG are N-channel MOS Field Effe...

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SCRIPTION The NP82N055MUG and NP82N055NUG are N-channel MOS Field Effect Transistors designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP82N055MUG-S18-AY Note NP82N055NUG-S18-AY Note LEAD PLATING Pure Sn (Tin) PACKING Tube 50 p/tube Note Pb-free (This product does not contain Pb in the external electrode.) PACKAGE TO-220 (MP-25K) typ. 1.9 g TO-262 (MP-25SK) typ. 1.8 g FEATURES • Non logic level • Super low on-state resistance RDS(on) = 6.0 mΩ MAX. (VGS = 10 V, ID = 41 A) • High current rating ID(DC) = ±82 A • Low input capacitance Ciss = 6400 pF TYP.

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