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NP82P04PLF Datasheet PDF

NEC NP82P04PLF

The NP82P04PLF is P-channel MOS Field Effect Transistor designed for high current switching applications.
Part No. NP82P04PLF
Datasheet NP82P04PLF Download
Manufacturer
NEC
Description MOS FIELD EFFECT TRANSISTOR
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NP82P04PLF datasheet page 1 preview

DESCRIPTION

<R> ORDERING INFORMATION PART NUMBER NP82P04PLF-E1-AY NP82P04PLF-E2-AY Note Note LEAD PLATING Pure Sn (Tin) PACKING Tape 800 p/reel PACKAGE TO-263 (MP-25ZP) Note Pb-free (This product does not contain Pb in external electrode.)

FEATURES

● Super low on-state resistance RDS(on)1 = 8 mΩ MAX. (VGS = −10 V, ID = −41 A) RDS(on)2 = 12 mΩ MAX. (VGS = −4.5 V, ID = −41 A)
● Low input capacitance Ciss = 5000 pF TYP.
● Built-in gate protection diode (TO-263)

ABSOLUTE MAXIMUM RATINGS

(TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg −40 m20 m82 m246 150 1.8 175 −55 to +175 46 212 V V A A W W °C °C A mJ Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Repetitive Avalanche Current Repetitive Avalanche Energy Note2 Note2 IAR EAR Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1% 2. Tch ≤ 150°C, VDD = −20 V,...
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