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NP82P04PLF - MOS FIELD EFFECT TRANSISTOR

General Description

The NP82P04PLF is P-channel MOS Field Effect Transistor designed for high current switching applications.

Key Features

  • Super low on-state resistance RDS(on)1 = 8 mΩ MAX. (VGS =.
  • 10 V, ID =.
  • 41 A) RDS(on)2 = 12 mΩ MAX. (VGS =.
  • 4.5 V, ID =.
  • 41 A).
  • Low input capacitance Ciss = 5000 pF TYP.
  • Built-in gate protection diode (TO-263).

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Full PDF Text Transcription for NP82P04PLF (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for NP82P04PLF. For precise diagrams, and layout, please refer to the original PDF.

www.DataSheet4U.com DATA SHEET MOS FIELD EFFECT TRANSISTOR NP82P04PLF SWITCHING P-CHANNEL POWER MOSFET DESCRIPTION The NP82P04PLF is P-channel MOS Field Effect Transistor...

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ET DESCRIPTION The NP82P04PLF is P-channel MOS Field Effect Transistor designed for high current switching applications. <R> ORDERING INFORMATION PART NUMBER NP82P04PLF-E1-AY NP82P04PLF-E2-AY Note Note LEAD PLATING Pure Sn (Tin) PACKING Tape 800 p/reel PACKAGE TO-263 (MP-25ZP) Note Pb-free (This product does not contain Pb in external electrode.) FEATURES • Super low on-state resistance RDS(on)1 = 8 mΩ MAX. (VGS = −10 V, ID = −41 A) RDS(on)2 = 12 mΩ MAX. (VGS = −4.5 V, ID = −41 A) • Low input capacitance Ciss = 5000 pF TYP.

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