Datasheet4U Logo Datasheet4U.com

NP83P04PDG - MOS FIELD EFFECT TRANSISTOR

Description

The NP83P04PDG is P-channel MOS Field Effect Transistor designed for high current switching applications.

Features

  • Super low on-state resistance RDS(on)1 = 5.3 mΩ MAX. (VGS =.
  • 10 V, ID =.
  • 41.5 A) RDS(on)2 = 8.0 mΩ MAX. (VGS =.
  • 4.5 V, ID =.
  • 41.5 A).
  • High current rating: ID(DC) = m83 A (TO-263).

📥 Download Datasheet

Datasheet Details

Part number NP83P04PDG
Manufacturer NEC
File Size 209.95 KB
Description MOS FIELD EFFECT TRANSISTOR
Datasheet download datasheet NP83P04PDG Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
NP83P04PDG P-channel Power MOSFET Renesas
NP83P06PDG P-channel Power MOSFET Renesas
NP80N04MDG N-CHANNEL POWER MOS FET Renesas
NP80N04MLG N-CHANNEL POWER MOS FET Renesas
NP80N04NDG N-CHANNEL POWER MOS FET Renesas

Other Datasheets by NEC

Part Number Description
NP83P06PDG MOS FIELD EFFECT TRANSISTOR
NP80N03CDE SWITCHING N-CHANNEL POWER MOSFET
NP80N03CLE SWITCHING N-CHANNEL POWER MOS FET
NP80N03CLE SWITCHING N-CHANNEL POWER MOSFET
NP80N03DDE SWITCHING N-CHANNEL POWER MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com DATA SHEET MOS FIELD EFFECT TRANSISTOR NP83P04PDG SWITCHING P-CHANNEL POWER MOSFET DESCRIPTION The NP83P04PDG is P-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP83P04PDG-E1-AY NP83P04PDG-E2-AY Note Note LEAD PLATING Pure Sn (Tin) PACKING Tape 800 p/reel PACKAGE TO-263 (MP-25ZP) Note Pb-free (This product does not contain Pb in external electrode.) FEATURES • Super low on-state resistance RDS(on)1 = 5.3 mΩ MAX. (VGS = −10 V, ID = −41.5 A) RDS(on)2 = 8.0 mΩ MAX. (VGS = −4.5 V, ID = −41.
Published: |