NP88N055CHE Datasheet MOS FIELD EFFECT TRANSISTOR

Manufacturer: NEC (now Renesas Electronics)

NP88N055CHE mos field effect transistor by NEC (now Renesas Electronics) - Datasheet Preview

Datasheet Details

Part number	NP88N055CHE
Manufacturer	NEC (now Renesas Electronics)
File Size	265.24 KB
Description	MOS FIELD EFFECT TRANSISTOR
Datasheet	NP88N055CHE Datasheet

General Description

These products are N-channel MOS Field Effect Transistors designed for high current switching applications.

ORDERING INFORMATION PART NUMBER NP88N055EHE-E1-AY NP88N055EHE-E2-AY NP88N055KHE-E1-AY NP88N055KHE-E2-AY Note1, 2 Note1, 2 Note1 Note1 Note1, 2 Note1, 2 Note1 Note1 LEAD PLATING PACKING PACKAGE TO-263 (MP-25ZJ) typ.

1.4 g Pure Sn (Tin) Tape 800 p/reel TO-263 (MP-25ZK) typ.

Overview

www.DataSheet.co.kr DATA SHEET MOS FIELD EFFECT TRANSISTOR NP88N055EHE, NP88N055KHE NP88N055CHE, NP88N055DHE, NP88N055MHE, NP88N055NHE SWITCHING N-CHANNEL POWER MOS.

Key Features

Channel temperature 175 degree rated.
Super low on-state resistance RDS(on) = 5.3 mΩ MAX. (VGS = 10 V, ID = 44 A).
Low input capacitance Ciss = 7600 pF TYP.
Built-in gate protection diode (TO-262) (TO-263) The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales re.

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