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SE1003 - Light Emitting Diode

General Description

The SE1003 is a GaAIAs on GaAs Infrared Emitting Diode which is mounted on a lead frame and molded in plastic.

On forward bias, it emits a spectrally narrow band of radiation peaking at 950nm.

Key Features

  • o Economical o High output power o Wide half angle o Good linearity n Spectrally matched to silicon sensors LI Long lead.

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Other Datasheets by NEC (now Renesas Electronics)

Part Number Description

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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,..,EC NEe Electronics Inc. SE1003 GaAIAs on GaAs INFRARED EMITTING DIODE NEPOC SERIES Description The SE1003 is a GaAIAs on GaAs Infrared Emitting Diode which is mounted on a lead frame and molded in plastic. On forward bias, it emits a spectrally narrow band of radiation peaking at 950nm. Package Dimensions Features o Economical o High output power o Wide half angle o Good linearity n Spectrally matched to silicon sensors LI Long lead Applications o Light source for TV remote control o Light source for smoke detector o Optical encoders o Photo choppers, isolators Clear Plastic Resin Crtrn$~-i (OOO~') L5· f-r---,--'I ~ 3.3 ± 0.5 0.65 (0.026) Part A, 1.04 _1(0"30) (0.041) Part B: 0.65 (0.025) 24 Min (0.945 Min) A: 4>1.2 Max (<1>0.047 Max) B: ~O.8 Max (¢0.031 Max) 2 ± 0.