Datasheet4U Logo Datasheet4U.com

UPA1744TP - SWITCHING N-CHANNEL POWER MOSFET

Datasheet Summary

Description

The µ PA1744TP is N-channel MOS FET device that

Features

  • a low on-state resistance and excellent switching characteristics, and designed for high voltage.

📥 Download Datasheet

Datasheet preview – UPA1744TP

Datasheet Details

Part number UPA1744TP
Manufacturer NEC
File Size 109.43 KB
Description SWITCHING N-CHANNEL POWER MOSFET
Datasheet download datasheet UPA1744TP Datasheet
Additional preview pages of the UPA1744TP datasheet.

📁 Similar Datasheet

  • UPA1708G - N-Channel 40V MOSFET (VBsemi)
  • UPA1572 - N-CHANNEL POWER MOS FET ARRAY SWITCHING TYPE (Renesas)
  • UPA1855 - N-CHANNEL MOS FIELD EFFECT TRANSISTOR (Renesas)
  • UPA1A102MPD - ALUMINUM ELECTROLYTIC CAPACITORS (Nichicon)
  • UPA1A103MPD - ALUMINUM ELECTROLYTIC CAPACITORS (Nichicon)
  • UPA1A122MPD - ALUMINUM ELECTROLYTIC CAPACITORS (Nichicon)
  • UPA1A152MPD - ALUMINUM ELECTROLYTIC CAPACITORS (Nichicon)
  • UPA1A182MPD - ALUMINUM ELECTROLYTIC CAPACITORS (Nichicon)
  • UPA1A222MPD - ALUMINUM ELECTROLYTIC CAPACITORS (Nichicon)
  • UPA1A272MPD - ALUMINUM ELECTROLYTIC CAPACITORS (Nichicon)
Other Datasheets by NEC
  • UPA1740TP - SWITCHING N-CHANNEL POWER MOSFET
  • UPA1741TP - SWITCHING N-CHANNEL POWER MOSFET
  • UPA1742TP - SWITCHING N-CHANNEL POWER MOSFET
  • UPA1743TP - SWITCHING N-CHANNEL POWER MOSFET
  • UPA1700A - SWITCHING N-CHANNEL POWER MOSFET
  • UPA1701A - SWITCHING N-CHANNEL POWER MOSFET
  • UPA1703 - SWITCHING N-CHANNEL POWER MOSFET
  • UPA1704 - SWITCHING N-CHANNEL POWER MOSFET

Full PDF Text Transcription

Click to expand full text
DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1744TP SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The µ PA1744TP is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter. www.DataSheet4U.com PACKAGE DRAWING (Unit: mm) 8 5 1, 2, 3 : Source 4 : Gate 5, 6, 7, 8, 9: Drain FEATURES 1.49 ±0.21 • Low on-state resistance RDS(on) = 30 mΩ MAX. (VGS = 10 V, ID = 5.0 A) • Low input capacitance Ciss = 3400 pF TYP. (VDS = 10 V, VGS = 0 V) • Built-in gate protection diode • Small and surface mount package (Power HSOP8) 1.44 TYP. 1 5.2 +0.17 –0.2 4 0.8 ±0.2 S +0.10 –0.05 6.0 ±0.3 4.4 ±0.15 0.05 ±0.05 0.15 1.27 TYP. 0.40 1 +0.10 –0.05 0.10 S 0.12 M 2.9 MAX.
Published: |