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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA1870B
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
DESCRIPTION
The µPA1870B is a switching device which can be driven directly by a 2.5 V power source. The µPA1870B features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on.
8
PACKAGE DRAWING (Unit: mm)
5 1 2, 3 4 5 6, 7 8 :Drain1 :Source1 :Gate1 :Gate2 :Source2 :Drain2
1.2 MAX. 1.0±0.05 0.25
° 3° +5 –3°
FEATURES
• 2.5 V drive available • Low on-state resistance RDS(on)1 = 16.0 mΩ TYP. (VGS = 4.5 V, ID = 3.0 A) RDS(on)2 = 16.5 mΩ TYP. (VGS = 4.0 V, ID = 3.0 A) RDS(on)3 = 20.0 mΩ TYP. (VGS = 2.5 V, ID = 3.0 A) • Built-in G-S protection diode against ESD
1 4
0.1±0.