UPA1900 Datasheet | NEC

DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1900 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The µPA1900 is a switching device which can be driven directly by a 2.5 V power source. The µPA1900 Features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. 2.8 ±0.2 PACKAGE DRAWING (Unit : mm) 0.32 +0.1 - 0.05 0.65- 0.15 +0.1 0.16+0.1 - 0.06 0 to 0.1 1 2 3 Features - Can be driven by a 2.5 V power source - Low on-state resistance RDS(on)1 = 35 mΩ MAX. (VGS = 4.5 V, ID = 3.0 A) RDS(on)2 = 38 mΩ MAX. (VGS = 4.0 V, ID = 3.0 A) RDS(on)3 = 45 mΩ MAX. (VGS = 2.5 V, ID = 3.0 A) 0.95 0.95 0.65 0.9 to 1.1 1.9 2.9 ±0.2 1, 2, 5, 6 : Drain 3 : Gate 4 : Source ORDERING INFORMATION PART NUMBER PACKAGE 6-pin Mini Mold (Thin Type) EQUIVALENT CIRCUIT Drain µPA1900TE...