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UPA2510 - P-CHANNEL MOS FIELD EFFECT TRANSISTOR

General Description

The µ PA2510, which has a heat spreader, is P-channel applications of notebook computers.

0.65 TYP.

Key Features

  • spreader. The land size is same as 8-pin TSSOP.
  • Low on-state resistance RDS(on)1 = 10.1 mΩ MAX. (VGS =.
  • 10.0 V, ID =.
  • 9.0 A) RDS(on)2 = 14.0 mΩ MAX. (VGS =.
  • 4.5 V, ID =.
  • 9.0 A).
  • Low Ciss: 3000 pF TYP. (VDS =.
  • 10.0 V, VGS = 0 V) +0.05 0.25.
  • 0.05 0.10 M.
  • µ PA2510 has a thin surface mount package with a heat +0.1 1 2 3 4 5.8 ±0.1 6.4 ±0.1 8 7 6 5 3.15 ±0.15 3 ±0.1 0.17 ±0.05 0.8 MAX. 0.10 S.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET MOS FIELD EFFECT TRANSISTOR www.DataSheet4U.com µ PA2510 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The µ PA2510, which has a heat spreader, is P-channel applications of notebook computers. 0.65 TYP. PACKAGE DRAWING (Unit: mm) MOS Field Effect Transistor designed for power management FEATURES spreader. The land size is same as 8-pin TSSOP. • Low on-state resistance RDS(on)1 = 10.1 mΩ MAX. (VGS = −10.0 V, ID = −9.0 A) RDS(on)2 = 14.0 mΩ MAX. (VGS = −4.5 V, ID = −9.0 A) • Low Ciss: 3000 pF TYP. (VDS = −10.0 V, VGS = 0 V) +0.05 0.25 −0.05 0.10 M • µ PA2510 has a thin surface mount package with a heat +0.1 1 2 3 4 5.8 ±0.1 6.4 ±0.1 8 7 6 5 3.15 ±0.15 3 ±0.1 0.17 ±0.05 0.8 MAX. 0.