Datasheet4U Logo Datasheet4U.com

UPA610TA - P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING

General Description

The µPA610TA is a switching device which can be driven directly by a 2.5 V power source.

0.15 0.32 +0.1 0.05 0.16 +0.1 0.06 suitable for use as a high-speed switch

Key Features

  • Can be driven by a 2.5 V power source.
  • Low Gate Cut-off Voltage. 0.95 0.95 1.9 2.9 ±0.2 0.8 1.1 to 1.4.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
uPA602CT N-CHANNEL MOSFET Renesas
uPA606CT N-CHANNEL MOSFET Renesas
UPA622TT N-Channel MOSFET Renesas
UPA650TT P-CHANNEL MOS FIELD EFFECT TRANSISTOR Renesas
UPA672T N-CHANNEL MOS FET ARRAY Renesas

Other Datasheets by NEC (now Renesas Electronics)

Part Number Description
UPA611TA N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
UPA602T N-Channel MOSFET
UPA603T P-CHANNEL MOSFET
UPA606T N-CHANNEL MOSFET
UPA607T P-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA610TA P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION The µPA610TA is a switching device which can be driven directly by a 2.5 V power source. The µPA610TA has excellent switching characteristics, and is 2.8 ±0.2 Package Drawings (unit: mm) 0.65 +0.1 –0.15 0.32 +0.1 –0.05 0.16 +0.1 –0.06 suitable for use as a high-speed switching device in digital circuits. 1.5 0 to 0.1 FEATURES • Can be driven by a 2.5 V power source. • Low Gate Cut-off Voltage. 0.95 0.95 1.9 2.9 ±0.2 0.8 1.1 to 1.