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UPA814TC - NPN SILICON RF TWIN TRANSISTOR

Key Features

  • Low voltage operation, low phase distortion.
  • Low noise: NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz.
  • Flat-lead 6-pin thin-type ultra super minimold package.
  • Built-in 2 transistors (2 × 2SC5195).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA814TC NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 × 2SC5195) FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Low voltage operation, low phase distortion • Low noise: NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • Flat-lead 6-pin thin-type ultra super minimold package. • Built-in 2 transistors (2 × 2SC5195) ORDERING INFORMATION Part Number Package Flat-lead 6-pin thin-type ultra super minimold Quantity Loose products (50 pcs) Supplying Form Embossed tape 8 mm wide. Pin 6 (Q1 Base), Pin 5 (Q1 Emitter), Pin 4 (Q2 Emitter) face to perforation side of the tape.