UPA831TC - NPN SILICON EPITAXIAL TRANSISTOR

NEC (now Renesas Electronics)

Datasheet Details

Part number	UPA831TC
Manufacturer	NEC (now Renesas Electronics)
File Size	79.46 KB
Description	NPN SILICON EPITAXIAL TRANSISTOR
Datasheet	UPA831TC Datasheet

General Description

The µPA831TC has built-in two different transistors (Q1 and Q2) for low noise amplification in the VHF band to UHF band.

Overview

DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA831TC NPN SILICON EPITAXIAL TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD.

Key Features

Low noise Q1 : NF = 1.2 dB TYP. , Q2 : NF = 1.4 dB TYP. @f = 1 GHz, VCE = 3 V, IC = 7 mA.
High gain Q1 : |S21e|2 = 9.0 dB TYP. , Q2 : |S21e|2 = 12.0 dB TYP. @f = 1 GHz, VCE = 3 V, IC = 7 mA.
Flat-lead 6-pin thin-type ultra super minimold package.
2 different built-in transistors (2SC5006, 2SC5007) BUILT-IN.

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