UPC1675G
UPC1675G is GENERAL PURPOSE WIDE BNAD AMPLIFIER manufactured by NEC.
DESCRIPTION
The µPC1675G is a silicon monolithic integrated circuit employing small package (4pins mini mold) and designed for use as a wide bnad amplifier convers from HF band to UHF band.
FEATURES
- Excellent frequency response : 1.9 GHz TYP. @ 3 d B down below flat gain.
- High isolation.
- Super small package.
- Uni- and low voltage operation : VCC = 5 V
- Input and output matching 50 Ω.
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Supply Voltage Total Power Dissipation Operating Temperature Storage Temperature VCC PT Topt Tstg 6 200
- 40 to +85
- 55 to +150 V m W °C °C
ELECTRICAL CHARACTERISTICS (TA = 25 °C, VCC = 5 V)
CHARACTERISTIC Circuit Current Power Gain Noise Figure Upper Limit Operating Frequency Isolation Input Return Loss Output Return Loss Maximum Output Level SYMBOL ICC GP NF fu ISL RLin RLout PO 1.6 21 9 8 2 MIN. 12 10 TYP. 17 12 5.5 1.9 25 12 11 4 MAX. 22 14 7.0 UNIT m A d B d B GHz d B d B d B d Bm TEST CONDITIONS No Signal f = 0.5 GHz f = 0.5 GHz 3 d B down below flat gain f = 0.5 GHz f = 0.5 GHz f = 0.5 GHz f = 0.5 GHz, Pin = 0 d Bm
NEC cannot assume any responsibility for any circuits shown or represent that they are free from patent infringement.
Document No. P12446EJ2V0DS00 (2nd edition) (Previous No. IC-1890) Date Published March 1997 N Printed in Japan
©
µPC1675G
TYPICAL CHARACTERISTICS (TA = 25 °C)
CIRCUIT CURRENT vs. SUPPLY VOLTAGE 25 ICC-Circuit Current-m A 20 ICC-Circuit Current-m A 30
CIRCUIT CURRENT vs. OPERATING TEMPERATURE
15 10 5
0 0 1 2 3 4 5 6 VCC-Supply Voltage-V
- 50
Topt-Operating Temperature-°C
20 GP-Insertion Power Gain-d B 10 NF-Noise Figure-d B 7.5 5 2.5 0 16
NOISE FIGURE AND INSERTION POWER GAIN vs. FREQUENCY GP-Insertion Power Gain-d B
20 16 12
INSERTION POWER GAIN vs. FREQUENCY VCC = 5 V TA =
- 40 °C
VCC = 5.5 V GP
12 NF 8 4.5 V 4 0 5.0 V
+25 °C 8 +85 °C 4...
