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UPC2757T - SILICON MMIC 1st FREQUENCY DOWN-CONVERTER

Download the UPC2757T datasheet PDF. This datasheet also covers the UPC2758T variant, as both devices belong to the same silicon mmic 1st frequency down-converter family and are provided as variant models within a single manufacturer datasheet.

General Description

band mobile communications.

The ICs consist of mixer and local amplifier.

Key Features

  • low current consumption and the µPC2758T features improved intermodulation. From these two version, you can chose either IC corresponding to your system design. The µPC2757T and µPC2758T are manufactured using NEC’s 20 GHz fT NESAT™ III silicon bipolar process. This process uses silicon nitride passivation film and gold electrodes. These materials can protect chip surface from external pollution and prevent corrosion and migration. Thus, these products have excellent performance, uniformity and.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (UPC2758T_NEC.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by NEC (now Renesas Electronics)

Part Number Description
UPC2757TB SILICON MMIC 1st FREQUENCY DOWN-CONVERTER
UPC2753GR monolithic IC
UPC2756T L-BAND SILICON DOWNCONVERTER IC
UPC2756TB MIXER+OSCILLATOR SILICON MMIC
UPC2758T SILICON MMIC 1st FREQUENCY DOWN-CONVERTER

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUITS µPC2757T, µPC2758T SILICON MMIC 1st FREQUENCY DOWN-CONVERTER FOR MOBILE COMMUNICATIONS DESCRIPTION The µPC2757T and µPC2758T are silicon monolithic integrated circuits designed as 1st down-converters for L band mobile communications. The ICs consist of mixer and local amplifier. The µPC2757T features low current consumption and the µPC2758T features improved intermodulation. From these two version, you can chose either IC corresponding to your system design. The µPC2757T and µPC2758T are manufactured using NEC’s 20 GHz fT NESAT™ III silicon bipolar process. This process uses silicon nitride passivation film and gold electrodes. These materials can protect chip surface from external pollution and prevent corrosion and migration.