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UPC2762T - 3 V/ 2.9 GHz SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER FOR MOBILE COMMUNICATIONS

Download the UPC2762T datasheet PDF. This datasheet also covers the UPC-2762 variant, as both devices belong to the same 3 v/ 2.9 ghz silicon mmic medium output power amplifier for mobile communications family and are provided as variant models within a single manufacturer datasheet.

General Description

The UPC2762T and UPC2763T are Silicon Monolithic integrated circuits which are manufactured using the NESAT III process.

The NESAT III process produces transistors with fT approaching 20 GHz.

Key Features

  • 7 dBm P1dB.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (UPC-2762-T.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
3 V, WIDEBAND MEDIUM POWER SI MMIC AMPLIFIER FEATURES • 7 dBm P1dB TYPICAL AT 1.9 GHz • LOW VOLTAGE: 3 Volts • WIDE BANDWIDTH: 2.9 GHz at -3 dB (UPC2762T) Gain, GS (dB) 24 22 UPC2763T 20 18 16 14 UPC2762T 12 UPC2762T UPC2763T GAIN vs. FREQUENCY VCC = 3.0 V, ICC = 27 mA • HIGH GAIN: 20 dB at 1.9 GHz (UPC2763T) • SUPER SMALL PACKAGE • TAPE AND REEL PACKAGING OPTION AVAILABLE DESCRIPTION The UPC2762T and UPC2763T are Silicon Monolithic integrated circuits which are manufactured using the NESAT III process. The NESAT III process produces transistors with fT approaching 20 GHz. These amplifiers were designed for 900 MHz and 1.9 GHz receivers in cellular, cordless telephone and PCN applications. Operating on a 3 volt supply these ICs are ideally suited for hand-held, portable designs.