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UPC2762T - 3 V/ 2.9 GHz SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER FOR MOBILE COMMUNICATIONS

This page provides the datasheet information for the UPC2762T, a member of the UPC-2762 3 V/ 2.9 GHz SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER FOR MOBILE COMMUNICATIONS family.

Datasheet Summary

Description

The UPC2762T and UPC2763T are Silicon Monolithic integrated circuits which are manufactured using the NESAT III process.

The NESAT III process produces transistors with fT approaching 20 GHz.

Features

  • 7 dBm P1dB.

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Datasheet preview – UPC2762T

Datasheet Details

Part number UPC2762T
Manufacturer NEC
File Size 137.63 KB
Description 3 V/ 2.9 GHz SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER FOR MOBILE COMMUNICATIONS
Datasheet download datasheet UPC2762T Datasheet
Additional preview pages of the UPC2762T datasheet.

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Full PDF Text Transcription

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3 V, WIDEBAND MEDIUM POWER SI MMIC AMPLIFIER FEATURES • 7 dBm P1dB TYPICAL AT 1.9 GHz • LOW VOLTAGE: 3 Volts • WIDE BANDWIDTH: 2.9 GHz at -3 dB (UPC2762T) Gain, GS (dB) 24 22 UPC2763T 20 18 16 14 UPC2762T 12 UPC2762T UPC2763T GAIN vs. FREQUENCY VCC = 3.0 V, ICC = 27 mA • HIGH GAIN: 20 dB at 1.9 GHz (UPC2763T) • SUPER SMALL PACKAGE • TAPE AND REEL PACKAGING OPTION AVAILABLE DESCRIPTION The UPC2762T and UPC2763T are Silicon Monolithic integrated circuits which are manufactured using the NESAT III process. The NESAT III process produces transistors with fT approaching 20 GHz. These amplifiers were designed for 900 MHz and 1.9 GHz receivers in cellular, cordless telephone and PCN applications. Operating on a 3 volt supply these ICs are ideally suited for hand-held, portable designs.
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