UPC2762T Datasheet | NEC

FEATURES - 7 d Bm P1d B TYPICAL AT 1.9 GHz - LOW VOLTAGE: 3 Volts - WIDE BANDWIDTH: 2.9 GHz at -3 d B (UPC2762T) Gain, GS (d B) 24 22 UPC2763T 20 18 16 14 UPC2762T 12 UPC2762T UPC2763T GAIN vs. FREQUENCY VCC = 3.0 V, ICC = 27 m A - HIGH GAIN: 20 d B at 1.9 GHz (UPC2763T) - SUPER SMALL PACKAGE - TAPE AND REEL PACKAGING OPTION AVAILABLE DESCRIPTION The UPC2762T and UPC2763T are Silicon Monolithic integrated circuits which are manufactured using the NESAT III process. The NESAT III process produces transistors with f T approaching 20 GHz. These amplifiers were designed for 900 MHz and 1.9 GHz receivers in cellular, cordless telephone and PCN applications. Operating on a 3 volt supply these ICs are ideally suited for hand-held, portable designs. NEC's stringent quality assurance and test procedures en.. sure the highest reliability and performance. 10 8 100 Frequency, f (MHz) ELECTRICAL CHARACTERISTICS (TA = 25°C, ZL = ZS = 50Ω, VCC = 3.0 V) PART NUMBER PACKAGE OUTLINE SYMBOLS ICC GS f U1 P1d B PSAT NF RLIN RLOUT ISOL OIP3 RTH (J-A) PARAMETERS AND CONDITIONS Circuit Current (no signal) Small Signal Gain, f = 900 MHz f = 1900 MHz UNITS m A d B d B GHz d Bm d Bm d Bm d Bm d B d B d B d B d B d B d B d B d Bm d Bm °C/W °C/W 6 5.5 8 9 22 20 11 11.5 2.7 +5.5 +4.5 MIN UPC2762T T06 TYP 27 13 14.5 2.9 +8 +7 9 8.5 6.5 7 9 8.5 11 12 27 25 +12 +9 620 230 8 8.5 8 9 5 6 25 24 MAX 35 16 17.5 16 16.5 2.0 +7 +4 MIN UPC2763T T06 TYP 27 20 19.5 2.4 +9.5 +6.5 11 8 5.5 5.5 11 12 8 9 30 29 +17 +11 620 230 7.0 7.0 MAX 35 23 22.5 Upper Limit Operating Frequency (The gain at fu is 3 d B down from the gain at 0.1 GHz) Output Power at 1 d B pression Point, f = 900 MHz f = 1900 MHz Saturated Output Power, f = 900 MHz f = 1900 MHz Noise Figure, Input Return Loss, Output Return Loss, Isolation, f = 900 MHz f = 1900 MHz f = 900 MHz f = 1900 MHz f = 900 MHz f = 1900 MHz f = 900 MHz f = 1900 MHz f = 1900, 1902 MHz Thermal Resistance (Junction to Ambient) Free Air Mounted on a 50 x 50 x 1.6 mm epoxy...