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UPC3210TB - 5 V/ SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER

General Description

The µPC3210TB is a silicon monolithic integrated circuits designed as wideband amplifier.

The µPC3210TB is suitable to systems required wideband operation from HF to L band.

This IC is manufactured using NEC’s 20 GHz fT NESAT™III silicon bipolar process.

Key Features

  • High-density surface mounting: 6-pin super minimold package.
  • Supply voltage.
  • Wideband response.
  • Power gain.
  • Noise figure : VCC = 4.5 to 5.5 V : fu = 2.3 GHz TYP. @3 dB bandwidth : GP = 20 dB TYP. @f = 1.5 GHz : NF = 3.4 dB TYP. @f = 1.5 GHz.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC3210TB 5 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER DESCRIPTION The µPC3210TB is a silicon monolithic integrated circuits designed as wideband amplifier. The µPC3210TB is suitable to systems required wideband operation from HF to L band. This IC is manufactured using NEC’s 20 GHz fT NESAT™III silicon bipolar process. This process uses silicon nitride passivation film and gold electrodes. These materials can protect chip surface from external pollution and prevent corrosion/migration. Thus, this IC has excellent performance, uniformity and reliability. FEATURES • High-density surface mounting: 6-pin super minimold package • Supply voltage • Wideband response • Power gain • Noise figure : VCC = 4.5 to 5.5 V : fu = 2.3 GHz TYP.