• Part: UPC805T
  • Description: MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD
  • Manufacturer: NEC
  • Size: 57.78 KB
Download UPC805T Datasheet PDF
NEC
UPC805T
UPC805T is MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD manufactured by NEC.
PRELIMINARY DATA SHEET SILICON TRANSISTOR µPA805T MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD Features - Low Noise, High Gain - Operable at Low Voltage - Small Feed-back Capacitance Cre = 0.3 pF TYP. - Built-in 2 Transistors (2 × 2SC4958) PACKAGE DRAWINGS (Unit: mm) 2.1±0.1 1.25±0.1 0.65 0.65 2.0±0.2 ORDERING INFORMATION PART NUMBER QUANTITY Loose products (50 PCS) PACKING STYLE Embossed tape 8 mm wide. Pin 6 (Q1 Base), Pin 5 (Q2 Base), Pin 4 (Q2 Emitter) face to perforation side of the tape. 0.9±0.1 µPA805T µPA805T-T1 Taping products (3 KPCS/Reel) Remark If you require an evaluation sample, please...