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UPC805T - MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD

Key Features

  • Low Noise, High Gain.
  • Operable at Low Voltage.
  • Small Feed-back Capacitance Cre = 0.3 pF TYP.
  • Built-in 2 Transistors (2 × 2SC4958).

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PRELIMINARY DATA SHEET SILICON TRANSISTOR µPA805T MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD FEATURES • Low Noise, High Gain • Operable at Low Voltage • Small Feed-back Capacitance Cre = 0.3 pF TYP. • Built-in 2 Transistors (2 × 2SC4958) PACKAGE DRAWINGS (Unit: mm) 2.1±0.1 1.25±0.1 0.65 0.65 2.0±0.2 1.3 2 ORDERING INFORMATION PART NUMBER QUANTITY Loose products (50 PCS) PACKING STYLE Embossed tape 8 mm wide. Pin 6 (Q1 Base), Pin 5 (Q2 Base), Pin 4 (Q2 Emitter) face to perforation side of the tape. 3 0.9±0.1 µPA805T 0.7 4 5 µPA805T-T1 Taping products (3 KPCS/Reel) Remark If you require an evaluation sample, please contact an NEC Sales Representative. (Unit sample quantity is 50 pcs.