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UPD16813 - MONOLITHIC DUAL H-BRIDGE DRIVER

General Description

The µPD16813 is a monolithic dual H bridge driver circuit which uses power MOS FETs in its driver stage.

By complementing the P channel and N channel of the output stage, the circuit current has been substantially inproved as compared with that of conventional charge pump drivers.

Key Features

  • Low ON resistance (sum of ON resistors of top and bottom transistors) RON = 2.0 Ω TYP.
  • Low current consumption: IDD = 100 µA MAX.
  • Noise reduction circuit that operates when INC is OFF.
  • Compact surface mount package: 16-pin plastic SOP (300 mil) PIN.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET MOS INTEGRATED CIRCUIT µPD16813 MONOLITHIC DUAL H BRIDGE DRIVER CIRCUIT DESCRIPTION The µPD16813 is a monolithic dual H bridge driver circuit which uses power MOS FETs in its driver stage. By complementing the P channel and N channel of the output stage, the circuit current has been substantially inproved as compared with that of conventional charge pump drivers. The µPD16813 is therefore ideal as the driver circuit of the 2-phase excitation, bipolar-driven stepping motor for the head actuator of an FDD. FEATURES • Low ON resistance (sum of ON resistors of top and bottom transistors) RON = 2.0 Ω TYP. • Low current consumption: IDD = 100 µA MAX. • Noise reduction circuit that operates when INC is OFF.