Datasheet4U Logo Datasheet4U.com

UPD16837 - MONOLITHIC QUAD H BRIDGE DRIVER

General Description

The µPD16837 is a monolithic quad H bridge driver employing power MOS FETs in the output stage.

The MOS FETs in the output stage lower the saturation voltage and power consumption as compared with conventional drivers using bipolar transistors.

Key Features

  • Four H bridge circuits employing power MOS FETs.
  • High-speed PWM drive: Operating frequency: 120 kHz MAX.
  • Low-voltage malfunction prevention circuit: Operating voltage: 2.5 V (TYP. ).
  • 30-pin shrink SOP (300 mil).

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
uPD16836 THREE-PHASE SPINDLE MOTOR DRIVER Renesas
UPD168104 6-CHANNEL OPERATIONAL AMPLIFIER Renesas
uPD168110 MICROSTEP DRIVER Renesas
uPD16818 MONOLITHIC DUAL H-BRIDGE DRIVER Renesas
UPD16876 Single Pch High-Side Switch for USB NEC Electronics

Other Datasheets by NEC (now Renesas Electronics)

Part Number Description
UPD168302 MONOLITHIC 2CH H-BRIDGE DRIVER
UPD16833A MONOLITHIC QUAD H BRIDGE DRIVER CIRCUIT
UPD16835 MONOLITHIC QUAD H BRIDGE DRIVER CIRCUIT
UPD168001 MONOLITHIC 4-CHANNEL H BRIDGE LOW-SIDE SWITCH
UPD168002 MONOLITHIC 6-CHANNEL H-BRIDGE DRIVER

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DATA SHEET MOS INTEGRATED CIRCUIT µPD16837 MONOLITHIC QUAD H BRIDGE DRIVER DESCRIPTION The µPD16837 is a monolithic quad H bridge driver employing power MOS FETs in the output stage. The MOS FETs in the output stage lower the saturation voltage and power consumption as compared with conventional drivers using bipolar transistors. In addition, a low-voltage malfunction prevention circuit is also provided that prevents the IC from malfunctioning when the supply voltage drops. A 30-pin plastic shrink SOP package is adopted to help create compact and slim application sets.