UPD17121 Datasheet PDF

µPD17120 SUBSERIES 4-BIT SINGLE-CHIP MICROCONTROLLER µPD17120 µPD17121 µPD17132 µPD17133 µPD17P132 µPD17P133 © 1993 Document No. IEU-1367A (O. D. No. IEU-835A) Date Published July 1995 P Printed in Japan NOTES FOR CMOS DEVICES 1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS Note: Strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. Environmental control must be adequate. When it is dry, humidifier should be used. It is recommended to avoid using insulators that easily build static electricity. Semiconductor devices must be stored and transported in an anti-static container, static shielding bag or conductive material. All test and measurement tools including work bench and floor should be grounded. The operator should be grounded using wrist strap. Semiconductor devices must not be touched with bare hands.