UPD29F064115-X Datasheet PDF - NEC 64M-BIT CMOS LOW-VOLTAGE DUAL OPERATION FLASH MEMORY Specs

UPD29F064115-X - 64M-BIT CMOS LOW-VOLTAGE DUAL OPERATION FLASH MEMORY

Datasheet Summary

Description

The µPD29F064115-X is a flash memory organized of 67,108,864 bits and 142 sectors.

Sectors of this memory can be erased at a low voltage (1.65 to 1.95 V, 1.8 to 2.1 V ) supplied from a power source, or the contents of the entire chip can be erased.

Features

Four bank organization enabling simultaneous execution of program / erase and read.
High-speed read with page mode.
Bank organization : 4 banks (8M bits + 24M bits + 24M bits + 8M bits).
Memory organization : 4,194,304 words × 16 bits.
Sector organization : 142 sectors (4K words × 16 sectors, 32K words × 126 sectors) The boot sector is located at the highest address (sector) and the lowest address (sector).
3-state output.
Automatic.

Datasheet Details

Part number	UPD29F064115-X
Manufacturer	NEC
File Size	573.53 KB
Description	64M-BIT CMOS LOW-VOLTAGE DUAL OPERATION FLASH MEMORY
Datasheet	UPD29F064115-X Datasheet
Additional preview pages of the UPD29F064115-X datasheet.

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Full PDF Text Transcription

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www.DataSheet4U.com DATA SHEET MOS INTEGRATED CIRCUIT µPD29F064115-X 64M-BIT CMOS LOW-VOLTAGE DUAL OPERATION FLASH MEMORY 4M-WORD BY 16-BIT (WORD MODE) PAGE MODE Description The µPD29F064115-X is a flash memory organized of 67,108,864 bits and 142 sectors. Sectors of this memory can be erased at a low voltage (1.65 to 1.95 V, 1.8 to 2.1 V ) supplied from a power source, or the contents of the entire chip can be erased. Memory organization is 4,194,304 words × 16 bits, so that the memory can be programmed in word units. µPD29F064115-X can be read high speed with page mode. The µPD29F064115-X can be read while its contents are being erased or programmed. The memory cell is divided into four banks.

Published: Aug 29, 2006 |