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UPD431000A - 1M-BIT CMOS STATIC RAM 128K-WORD BY 8-BIT

Download the UPD431000A datasheet PDF. This datasheet also covers the UPD431000ACZ variant, as both devices belong to the same 1m-bit cmos static ram 128k-word by 8-bit family and are provided as variant models within a single manufacturer datasheet.

General Description

The µPD431000A is a high speed, low power, and 1,048,576 bits (131,072 words by 8 bits) CMOS static RAM.

The µPD431000A has two chip enable pins (/CE1, CE2) to extend the capacity.

And battery backup is available.

Key Features

  • 131,072 words by 8 bits organization.
  • Fast access time: 70, 85, 100, 120, 150 ns (MAX. ).
  • Low voltage operation (A version: VCC = 3.0 to 5.5 V, B version: VCC = 2.7 to 5.5 V).
  • Operating ambient temperature: TA = 0 to 70 °C.
  • Low VCC data retention: 2.0 V (MIN. ).
  • Output Enable input for easy.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (UPD431000ACZ_NEC.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DATA SHEET MOS INTEGRATED CIRCUIT µ PD431000A 1M-BIT CMOS STATIC RAM 128K-WORD BY 8-BIT Description The µPD431000A is a high speed, low power, and 1,048,576 bits (131,072 words by 8 bits) CMOS static RAM. The µPD431000A has two chip enable pins (/CE1, CE2) to extend the capacity. And battery backup is available. In addition to this, A and B versions are low voltage operations. The µPD431000A is packed in 32-pin PLASTIC DIP, 32-pin PLASTIC SOP and 32-pin PLASTIC TSOP (I) (8 × 13.4 mm) and (8 × 20 mm). Features • 131,072 words by 8 bits organization • Fast access time: 70, 85, 100, 120, 150 ns (MAX.) • Low voltage operation (A version: VCC = 3.0 to 5.5 V, B version: VCC = 2.7 to 5.5 V) • Operating ambient temperature: TA = 0 to 70 °C • Low VCC data retention: 2.0 V (MIN.