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UPD4416001 - 16M-BIT CMOS FAST SRAM 16M-WORD BY 1-BIT

General Description

The µPD4416001 is a high speed, low power, 16,777,216 bits (16,777,216 words by 1 bits) CMOS static RAM.

Operating supply voltage is 3.3 V ± 0.3 V.

The µPD4416001 is packaged in a 54-PIN PLASTIC TSOP (II).

Key Features

  • 16,777,216 words by 1 bits.
  • Fast access time : 15, 17 ns (MAX. ).
  • Output Enable input for easy.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET MOS INTEGRATED CIRCUIT µPD4416001 16M-BIT CMOS FAST SRAM 16M-WORD BY 1-BIT Description The µPD4416001 is a high speed, low power, 16,777,216 bits (16,777,216 words by 1 bits) CMOS static RAM. Operating supply voltage is 3.3 V ± 0.3 V. The µPD4416001 is packaged in a 54-PIN PLASTIC TSOP (II). Features • 16,777,216 words by 1 bits • Fast access time : 15, 17 ns (MAX.) • Output Enable input for easy application Ordering Information Part number Package Supply voltage V Access time ns (MAX.) 15 17 Supply current mA (MAX.) At operating 165 160 At standby 10 • • µPD4416001G5-A15-9JF µPD4416001G5-A17-9JF 54-PIN PLASTIC TSOP (II) (10.16 mm (400)) 3.3 ± 0.3 The information in this document is subject to change without notice.