Datasheet Details
| Part number | UPD4416016 |
|---|---|
| Manufacturer | NEC (now Renesas Electronics) |
| File Size | 92.02 KB |
| Description | 16M-BIT CMOS FAST SRAM 1M-WORD BY 16-BIT |
| Datasheet | UPD4416016_NEC.pdf |
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Overview: DATA SHEET MOS INTEGRATED CIRCUIT µPD4416016 16M-BIT CMOS FAST SRAM 1M-WORD BY.
| Part number | UPD4416016 |
|---|---|
| Manufacturer | NEC (now Renesas Electronics) |
| File Size | 92.02 KB |
| Description | 16M-BIT CMOS FAST SRAM 1M-WORD BY 16-BIT |
| Datasheet | UPD4416016_NEC.pdf |
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The µPD4416016 is a high speed, low power, 16,777,216 bits (1,048,576 words by 16 bits) CMOS static RAM.
Operating supply voltage is 3.3 V ± 0.3 V.
The µPD4416016 is packaged in a 54-pin plastic TSOP (II).
| Part Number | Description |
|---|---|
| UPD4416001 | 16M-BIT CMOS FAST SRAM 16M-WORD BY 1-BIT |
| UPD4416004 | 16M-BIT CMOS FAST SRAM 4M-WORD BY 4-BIT |
| UPD4416008 | 16M-BIT CMOS FAST SRAM 2M-WORD BY 8-BIT |
| UPD44164082 | (UPD44164082/182/362) 18M-BIT DDRII SRAM 2-WORD BURST OPERATION |
| UPD44164084 | (UPD44164084/184/364) 18M-BIT DDRII SRAM 4-WORD BURST OPERATION |
| UPD44164085 | (UPD44164085/185/365) 18M-BIT DDRII SRAM SEPARATE I/O 2-WORD BURST OPERATION |
| UPD44164182 | (UPD44164082/182/362) 18M-BIT DDRII SRAM 2-WORD BURST OPERATION |
| UPD44164184 | (UPD44164084/184/364) 18M-BIT DDRII SRAM 4-WORD BURST OPERATION |
| UPD44164185 | (UPD44164085/185/365) 18M-BIT DDRII SRAM SEPARATE I/O 2-WORD BURST OPERATION |
| UPD44164362 | (UPD44164082/182/362) 18M-BIT DDRII SRAM 2-WORD BURST OPERATION |