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UPD4416016 - 16M-BIT CMOS FAST SRAM 1M-WORD BY 16-BIT

General Description

The µPD4416016 is a high speed, low power, 16,777,216 bits (1,048,576 words by 16 bits) CMOS static RAM.

Operating supply voltage is 3.3 V ± 0.3 V.

The µPD4416016 is packaged in a 54-pin plastic TSOP (II).

Key Features

  • 1,048,576 words by 16 bits organization.
  • Fast access time : 15, 17 ns (MAX. ).
  • Byte data control : /LB (I/O1 - I/O8), /UB (I/O9 - I/O16).
  • Output Enable input for easy.

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Full PDF Text Transcription (Reference)

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DATA SHEET MOS INTEGRATED CIRCUIT µPD4416016 16M-BIT CMOS FAST SRAM 1M-WORD BY 16-BIT Description The µPD4416016 is a high speed, low power, 16,777,216 bits (1,048,576 words by 16 bits) CMOS static RAM. Operating supply voltage is 3.3 V ± 0.3 V. The µPD4416016 is packaged in a 54-pin plastic TSOP (II). Features • 1,048,576 words by 16 bits organization • Fast access time : 15, 17 ns (MAX.) • Byte data control : /LB (I/O1 - I/O8), /UB (I/O9 - I/O16) • Output Enable input for easy application Ordering Information Part number Package Supply voltage V Access time ns (MAX.) 15 17 Supply current mA (MAX.) At operating 250 240 At standby 10 • µPD4416016G5-A15-9JF µPD4416016G5-A17-9JF 54-PIN PLASTIC TSOP (II) (10.16 mm (400)) 3.3 ± 0.