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DATA SHEET
MOS INTEGRATED CIRCUIT
µPD44164085, 44164185, 44164365
18M-BIT DDRII SRAM SEPARATE I/O 2-WORD BURST OPERATION
Description
The µPD44164085 is a 2,097,152-word by 8-bit, the µPD44164185 is a 1,048,576-word by 18-bit and the
µPD44164365 is a 524,288-word by 36-bit synchronous double data rate static RAM fabricated with advanced CMOS
technology using full CMOS six-transistor memory cell. The µPD44164085, µPD44164185 and µPD44164365 integrates unique synchronous peripheral circuitry and a burst counter. All input registers controlled by an input clock pair (K and /K) are latched on the positive edge of K and /K. These products are suitable for application which require synchronous operation, high speed, low voltage, high density and wide bit configuration.