UPD44165182 - (UPD44165082/182/362) 18M-BIT QDRII SRAM 2-WORD BURST OPERATION

This page provides the datasheet information for the UPD44165182, a member of the UPD44165082 (UPD44165082/182/362) 18M-BIT QDRII SRAM 2-WORD BURST OPERATION family.

Product Overview

NEC

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UPD44165182 (UPD44165082/182/362) 18M-BIT QDRII SRAM 2-WORD BURST OPERATION by NEC - Datasheet Preview — Datasheet preview – UPD44165182

Datasheet Details

Part number	UPD44165182
Manufacturer	NEC
File Size	385.19 KB
Description	(UPD44165082/182/362) 18M-BIT QDRII SRAM 2-WORD BURST OPERATION
Datasheet	UPD44165182 Datasheet
Additional preview pages of the UPD44165182 datasheet.

UPD44165182 Product details

Description

technology using full CMOS six-transistor memory cell.

Features

1.8 ± 0.1 V power supply and HSTL I/O.
DLL circuitry for wide output data valid window and future frequency scaling.
Separate independent read and write data ports with concurrent transactions.
100% bus utilization DDR READ and WRITE operation.
Two-tick burst for low DDR transaction size.
Two input clocks (K and /K) for precise DDR timing at clock rising edges only.
Two output clocks (C and /C) for precise flight time and clock skew.

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Other Datasheets by NEC

UPD44165184 - (UPD44165084/184/364) 18M-BIT QDRII SRAM 4-WORD BURST OPERATION
UPD44165082 - (UPD44165082/182/362) 18M-BIT QDRII SRAM 2-WORD BURST OPERATION
UPD44165084 - (UPD44165084/184/364) 18M-BIT QDRII SRAM 4-WORD BURST OPERATION
UPD44165362 - (UPD44165082/182/362) 18M-BIT QDRII SRAM 2-WORD BURST OPERATION
UPD44165364 - (UPD44165084/184/364) 18M-BIT QDRII SRAM 4-WORD BURST OPERATION
UPD4416001 - 16M-BIT CMOS FAST SRAM 16M-WORD BY 1-BIT
UPD4416004 - 16M-BIT CMOS FAST SRAM 4M-WORD BY 4-BIT
UPD4416008 - 16M-BIT CMOS FAST SRAM 2M-WORD BY 8-BIT

Published: Feb 16, 2006 |