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UPD444001 - 4M-BIT CMOS FAST SRAM 4M-WORD BY 1-BIT

Datasheet Summary

Description

The µPD444001 is a high speed, low power, 4,194,304 bits (4,194,304 words by 1 bit) CMOS static RAM.

Operating supply voltage is 5.0 V ± 0.5 V.

The µPD444001 is packaged in 32-pin PLASTIC SOJ.

Features

  • 4,194,304 words by 1 bit organization.
  • Fast access time : 10, 11, 12 ns (MAX. ).
  • Output Enable input for easy.

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Datasheet Details

Part number UPD444001
Manufacturer NEC
File Size 144.30 KB
Description 4M-BIT CMOS FAST SRAM 4M-WORD BY 1-BIT
Datasheet download datasheet UPD444001 Datasheet
Additional preview pages of the UPD444001 datasheet.

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Full PDF Text Transcription

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DATA SHEET MOS INTEGRATED CIRCUIT µPD444001 4M-BIT CMOS FAST SRAM 4M-WORD BY 1-BIT Description The µPD444001 is a high speed, low power, 4,194,304 bits (4,194,304 words by 1 bit) CMOS static RAM. Operating supply voltage is 5.0 V ± 0.5 V. The µPD444001 is packaged in 32-pin PLASTIC SOJ. Features • 4,194,304 words by 1 bit organization • Fast access time : 10, 11, 12 ns (MAX.) • Output Enable input for easy application • Single +5.0 V power supply Ordering Information Part number Package Access time ns (MAX.) Supply current mA (MAX.) At operating 170 160 150 At standby 10 µPD444001LE-10 µPD444001LE-11 µPD444001LE-12 32-pin PLASTIC SOJ (10.16 mm (400)) 10 11 12 The information in this document is subject to change without notice.
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