This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | UPD447-1 |
|---|---|
| Datasheet | UPD447-1 UPD447 Datasheet (PDF) |
| File Size | 237.38 KB |
| Manufacturer | NEC (now Renesas Electronics) |
| Description | 2K x 8 BIT STATIC CMOS RAM |
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2048 x 8 BIT STATIC CMOS RAM NEe }LPD447 }LPD447-1 }L PD447-2 ~rn~[~~~~illrnW OESCR IPTI ON The J-lPD447 is a high speed, low power, 2048 word by 8 bit static CMOS RAM fabricated using an advanced silicon gate CMOS technology. A unique circuitry technique makes the J-lPD447 a very low operating power device which requires no clock or refreshing to operate. Since the device has two chip enable inputs, it is suited...
See all NEC (now Renesas Electronics) datasheets
| Part Number | Description |
|---|---|
| UPD447-2 | 2K x 8 BIT STATIC CMOS RAM |
| UPD447 | 2K x 8 BIT STATIC CMOS RAM |
| UPD441000L-X | 1M-BIT CMOS STATIC RAM 128K-WORD BY 8-BIT EXTENDED TEMPERATURE OPERATION |
| UPD4416001 | 16M-BIT CMOS FAST SRAM 16M-WORD BY 1-BIT |
| UPD4416004 | 16M-BIT CMOS FAST SRAM 4M-WORD BY 4-BIT |
| UPD4416008 | 16M-BIT CMOS FAST SRAM 2M-WORD BY 8-BIT |
| UPD4416016 | 16M-BIT CMOS FAST SRAM 1M-WORD BY 16-BIT |
| UPD44164082 | (UPD44164082/182/362) 18M-BIT DDRII SRAM 2-WORD BURST OPERATION |
| UPD44164084 | (UPD44164084/184/364) 18M-BIT DDRII SRAM 4-WORD BURST OPERATION |
| UPD44164085 | (UPD44164085/185/365) 18M-BIT DDRII SRAM SEPARATE I/O 2-WORD BURST OPERATION |
