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UPD45128841 Datasheet 128m-bit Synchronous Dram 4-bank/ Lvttl

Manufacturer: NEC (now Renesas Electronics)

Overview: DATA SHEET MOS INTEGRATED CIRCUIT µPD45128441, 45128841, 45128163 128M-bit Synchronous DRAM 4-bank,.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

The µPD45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 × 4 × 4, 4,194,304 × 8 × 4, 2,097,152 × 16 × 4 (word × bit × bank), respectively.

The synchronous DRAMs achieved high-speed data transfer using the pipeline architecture.

All inputs and outputs are synchronized with the positive edge of the clock.

Key Features

  • Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge.
  • Pulsed interface.
  • Possible to assert random column address in every cycle.
  • Quad internal banks controlled by BA0(A13) and BA1(A12).
  • Byte control (×16) by LDQM and UDQM.
  • Programmable Wrap sequence (Sequential / Interleave).
  • Programmable burst length (1, 2, 4, 8 and full page).
  • Programmable /CAS latency (2 and 3).
  • Automatic precharge.

More Datasheets from NEC (now Renesas Electronics)

Part Number Description
UPD45128163 128M-bit Synchronous DRAM 4-bank/ LVTTL
UPD45128441 128M-bit Synchronous DRAM 4-bank/ LVTTL
UPD4516161 16M Bit Synchronous DRAM
UPD4516161A 16M Bit Synchronous DRAM
UPD4516421 16M-Bit Synchronous DRAM
UPD4516821 16M-Bit Synchronous DRAM
UPD4564163 64M-bit Synchronous DRAM
UPD4564163G5 64M Bit SDRAM
UPD4564323 64M-bit Synchronous DRAM 4-bank/ LVTTL
UPD4564441 64M-bit Synchronous DRAM

UPD45128841 Distributor