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Preliminary User’s Manual
V850E/CA1TM ATOMIC
32-/16-bit Single-Chip Microcontroller Hardware µPD703123, µPD70F3123
Document No. U14913EE1V0UM00 Date Published October 2001 NEC Corporation 2001 Printed in Germany
NOTES FOR CMOS DEVICES
1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS Note: Strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. Environmental control must be adequate. When it is dry, humidifier should be used. It is recommended to avoid using insulators that easily build static electricity.
UPD703123 Datasheet
