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Preliminary User’s Manual
V850/DB1TM AVALON
32-/16-bit Single-Chip Microcontroller Hardware µPD70F3080 µPD703081
Document No. U15011EE2V0UM00 Date Published October 2002 NEC Corporation 2002 Printed in Germany
NOTES FOR CMOS DEVICES
1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS Note: Strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. Environmental control must be adequate. When it is dry, humidifier should be used. It is recommended to avoid using insulators that easily build static electricity.
UPD70F3080 Datasheet
