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UPG175TA - L-Band PA DRIVER AMPLIFIER

Datasheet Summary

Description

(Personal Digital Cellular in Japan) and another L-band application.

The device can operate with 3.0 V, having the high gain and low distortion.

Features

  • Low Operation Voltage: VDD1 = VDD2 = 3.0 V.
  • fRF: 925 to 960 MHz@ Pout = +9 dBm.
  • Low distortion: Padj1 =.
  • 60 dBc typ. @ VDD = 3.0 V, Pout = +9 dBm, VAGC = 2.5 V External input and output matching.
  • Low operation Current: IDD = 20 mA typ. @ VDD = 3.0 V, Pout = +9 dBm, VAGC = 2.5 V External input and output matching.
  • Variable gain control function: ∆G = 35 dB typ. @ VAGC = 0.5 to 2.5 V.
  • 6 pin mini-mold package.

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Datasheet preview – UPG175TA

Datasheet Details

Part number UPG175TA
Manufacturer NEC
File Size 62.02 KB
Description L-Band PA DRIVER AMPLIFIER
Datasheet download datasheet UPG175TA Datasheet
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PRELIMINARY DATA SHEET GaAs INTEGRATED CIRCUIT µPG175TA L-Band PA DRIVER AMPLIFIER DESCRIPTION µPG175TA is a GaAs MMIC for PA driver amplifier with variable gain function which was developed for PDC (Personal Digital Cellular in Japan) and another L-band application. The device can operate with 3.0 V, having the high gain and low distortion. FEATURES • Low Operation Voltage: VDD1 = VDD2 = 3.0 V • fRF: 925 to 960 MHz@ Pout = +9 dBm • Low distortion: Padj1 = –60 dBc typ. @ VDD = 3.0 V, Pout = +9 dBm, VAGC = 2.5 V External input and output matching • Low operation Current: IDD = 20 mA typ. @ VDD = 3.0 V, Pout = +9 dBm, VAGC = 2.5 V External input and output matching • Variable gain control function: ∆G = 35 dB typ. @ VAGC = 0.5 to 2.
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