UPG2009TB - L-BAND HIGH POWER SPDT SWITCH

Product Overview

NEC

UPG2009TB L-BAND HIGH POWER SPDT SWITCH by NEC - Datasheet Preview — Datasheet preview – UPG2009TB

Datasheet Details

Part number	UPG2009TB
Manufacturer	NEC
File Size	202.67 KB
Description	L-BAND HIGH POWER SPDT SWITCH
Datasheet	UPG2009TB Datasheet
Additional preview pages of the UPG2009TB datasheet.

Product details

Description

The µPG2009TB is an L-band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular or cordless telephone application.The device can operate from 500 MHz to 2.5 GHz, having the low insertion loss and high isolation by 2.8 V control voltage.

Features

Low insertion loss : LINS = 0.25 dB TYP. @ Vcont1/2 = 2.8 V/0 V, f = 1.0 GHz LINS = 0.30 dB TYP. @ Vcont1/2 = 2.8 V/0 V, f = 2.0 GHz.
High isolation : ISL = 28 dB TYP. @ Vcont1/2 = 2.8 V/0 V, f = 2.0 GHz.
High power : Pin (0.1dB) = 34 dBm TYP. @ Vcont1/2 = 2.8 V/0 V, f = 1.0 GHz.
6-pin super minimold package (2.0 × 1.25 × 0.9 mm).

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Published: Apr 16, 2005 |