Datasheet Summary
DATA SHEET
GaAs INTEGRATED CIRCUIT
µPG2009TB
L-BAND HIGH POWER SPDT SWITCH
DESCRIPTION The µPG2009TB is an L-band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 500 MHz to 2.5 GHz, having the low insertion loss and high isolation by 2.8 V control voltage.
Features
- Low insertion loss : LINS = 0.25 dB TYP. @ Vcont1/2 = 2.8 V/0 V, f = 1.0 GHz
LINS = 0.30 dB TYP. @ Vcont1/2 = 2.8 V/0 V, f = 2.0 GHz
- High isolation
: ISL = 28 dB TYP. @ Vcont1/2 = 2.8 V/0 V, f = 2.0 GHz
- High power
: Pin (0.1dB) = 34 dBm TYP. @ Vcont1/2 = 2.8 V/0 V, f = 1.0 GHz
- 6-pin super minimold package (2.0...
