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UPG2009TB Datasheet L-band High Power Spdt Switch

Manufacturer: NEC (now Renesas Electronics)

Overview: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2009TB L-BAND HIGH POWER SPDT.

General Description

The µPG2009TB is an L-band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular or cordless telephone application.

The device can operate from 500 MHz to 2.5 GHz, having the low insertion loss and high isolation by 2.8 V control voltage.

Key Features

  • Low insertion loss : LINS = 0.25 dB TYP. @ Vcont1/2 = 2.8 V/0 V, f = 1.0 GHz LINS = 0.30 dB TYP. @ Vcont1/2 = 2.8 V/0 V, f = 2.0 GHz.
  • High isolation : ISL = 28 dB TYP. @ Vcont1/2 = 2.8 V/0 V, f = 2.0 GHz.
  • High power : Pin (0.1dB) = 34 dBm TYP. @ Vcont1/2 = 2.8 V/0 V, f = 1.0 GHz.
  • 6-pin super minimold package (2.0 × 1.25 × 0.9 mm).

Similar Datasheet

Brand Logo Part Number Description Manufacturer
CEL Logo UPG2009TB L-BAND HIGH POWER SPDT SWITCH CEL

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UPG2009TB Distributor