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Preliminary User’s Manual
VR4102™
64/32-bit Microprocessor
PPD30102
Document No. U12739EJ2V0UM00 (2nd edition) Date Published January 1998 N CP(K)
© 1997 © MIPS Technologies, Inc. 1996 Printed in Japan
[MEMO]
2
NOTES FOR CMOS DEVICES
1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS Note: Strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. Environmental control must be adequate. When it is dry, humidifier should be used. It is recommended to avoid using insulators that easily build static electricity.
VR4102 Datasheet
