NEC uPA1702
This product is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management applications of notebook computers.| Part No. | uPA1702 |
|---|---|
| Datasheet | uPA1702 Download |
| Manufacturer |  NEC |
| Description | N-CHANNEL POWER MOS FET |
| Buy | Stock & Price |
DESCRIPTION
FEATURES
● Low On-Resistance. RDS(on)1 = 15 mΩ Max. (VGS = 10 V, ID = 4.0 A) RDS(on)2 = 25 mΩ Max. (VGS = 4 V, ID = 4.0 A)● Low Ciss Ciss = 1300 pF Typ.
● Built-in G-S Protection Diode
● Small and Surface Mount Package (Power SOP8) 1.8 Max. 1.44 0.05 Min. PACKAGE DIMENSIONS (in: millimeter) 8 5 1, 2, 3 ; Source 4 ; Gate 5, 6, 7, 8 ; Drain 1 4 5.37 Max. 6.0 ±0.3 4.4 0.8 +0.10 –0.05 0.15 1.27 0.78 Max. 0.40 +0.10 –0.05 0.12 M 0.5 ±0.2 0.10
ABSOLUTE MAXIMUM RATINGS
(TA = 25 ˚C, all terminals are connected) Drain to Source Voltage VDSS 30 V Gate to Source Voltage VGSS ±20 V Drain Current (DC) ID(DC) ±8.0 A Drain Current (pulse)* ID(pulse) ±32 A Total Power Dissipation (TA = 25 ˚C) ** PT 2.0 W Channel Temperature Tch 150 ˚C Storage Temperature Tstg –55 to +150 ˚C Gate Gate Protection Diode Drain Body Diode Source * PW ≤ 10 µs, Duty Cycle ≤ 1 % ** Mounted on ceramic substrate of 1200 mm2 × 0.7 mm The diode connected between the gate and source of the transistor serves as a protector against ESD.
