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uPA1916 - P-CHANNEL MOS FIELD EFFECT TRANSISTOR

General Description

directly by a 1.8 V power source.

Key Features

  • a low on-state resistance and excellent switching characteristics, and is suitable for.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1916 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The µPA1916 is a switching device which can be driven directly by a 1.8 V power source. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • 1.8 V drive available • Low on-state resistance RDS(on)1 = 39 mΩ MAX. (VGS = –4.5 V, ID = –2.5 A) RDS(on)2 = 49 mΩ MAX. (VGS = –3.0 V, ID = –2.5 A) RDS(on)3 = 55 mΩ MAX. (VGS = –2.5 V, ID = –2.5 A) RDS(on)4 = 98 mΩ MAX. (VGS = –1.8 V, ID = –1.5 A) 2.8 ±0.2 1.5 0.65–+00..115 PACKAGE DRAWING (Unit: mm) 0.32 +0.1 –0.05 0.16+–00..016 6 5 4 1 2 3 0.95 0.95 1.9 2.9 ±0.2 0 to 0.1 0.65 0.9 to 1.