Datasheet Summary
V850ES/FE3-L
32-bit Single-Chip Microcontroller Hardware
µPD70F3610(A) µPD70F3610(A1) µPD70F3610(A2)
µPD70F3611(A) µPD70F3611(A1) µPD70F3611(A2)
µPD70F3612(A) µPD70F3612(A1) µPD70F3612(A2)
µPD70F3613(A) µPD70F3613(A1) µPD70F3613(A2)
µPD70F3614(A) µPD70F3614(A1) µPD70F3614(A2)
Document No. U19190EE1V0DS00 Date Published March 2008
© NEC Electronics 2008 Printed in Germany
V850ES/FE3-L
Notes for CMOS Devices
1. Precaution against ESD for semiconductors Strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and...