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S6R1008W1A Datasheet PDF

NETSOL S6R1008W1A

The S6R1016(V/C/W)1A and S6R1008(V/C/W)1A is a 1,048,576-bit high-speed Static Random Access Memory organized as 64K(128k) words by 16(8) bits. The S6R1016(V/C/ W)1A and S6R1008(V/C/W)1A use 16(8) common input and output lines and have an output enable pin which operates faster than address access time at read cycle. The device is fabricated using advanced CMOS process,6-TR based cell technology and designed for high-speed circuit technology.
Part No. S6R1008W1A
Datasheet S6R1008W1A Download
Manufacturer NETSOL
Description 1M Async FAST SRAM
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S6R1008W1A datasheet page 1 preview

FEATURES

● Fast Access Time 8, 10, 12, 15ns(Max)
● CMOS Low Power Dissipation Standby (TTL) : 10mA (Max.) (CMOS) : 6mA (Max.) Operating : 35mA (8ns, Max.) 30mA (10ns, Max.)
● Single 3.3 ±0.3V or 5.0 ±0.5V Power Supply - S6R10xxV1A : 3.3 ±0.3V Power Supply - S6R10xxC1A : 5.0 ±0.5V Power Supply
● Wide range of Power Supply - S6R10xxW1A : 1.65V ~ 3.6V Power Supply
● TTL Compatible Inputs and Outputs
● Fully Static Operation, No Clock or Refresh required
● Three State Outputs
● Data Byte Control(x16 Mode) LB : I/O0~ I/O7, UB : I/O8~ I/O15
● Standard 44 TSOP2 and 48FBGA Package Pin Configuration for 64K x 16
● Standard 32sTSOP1 and 48FBGA Package Pin Configura- tion for 128K x 8
● ROHS compliant
● Operating in Commercial and Industrial Temperature range.

GENERAL DESCRIPTION

And S6R1016(V/ C/W)1A allows that lower and upper byte access by data byte control(UB, LB). It is particularly well suited for use in high-density high-speed system applications. The S6R1016(V/C/W)1A is packaged in industry standard 400mil 44-pin TSOP2 and 48FBGA.
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