NETSOL S6R8008C1A
The S6R8016W(C)1A and S6R8008W(C)1A are a 8,388,608bit high-speed Static Random Access Memory organized as 512K (1M) words by 16(8) bits. The S6R8016W(C)1A (S6R8008W(C)1A) uses 16(8) common input and output lines and have an output enable pin which operates faster than address access time at read cycle. The device is fabricated using advanced CMOS process,6-TR based cell technology and designed for highspeed circuit technology.FEATURES
● Fast Access Time 8, 10, 12, 15ns(Max)● CMOS Low Power Dissipation Standby (TTL) : 25mA (Max.) (CMOS) : 15mA (Max.) Operating : 80mA (8ns, Max.) 70mA (10ns, Max.)
● Wide range of Power Supply - S6R80xxW1A : 1.65V ~ 3.6V Power Supply
● Single 5.0 ±0.5V Power Supply - S6R80xxC1A : 5.0 ±0.5V Power Supply
● TTL Compatible Inputs and Outputs
● Fully Static Operation, No Clock or Refresh required
● Three State Outputs
● Data Byte Control(x16 Mode) LB : I/O0~ I/O7, UB : I/O8~ I/O15
● Standard 44TSOP2 and 48FBGA Package Pin Configuration.
● Operating in Commercial and Industrial Temperature range.
GENERAL DESCRIPTION
And S6R8016W(C)1A allows that lower and upper byte access by data byte control(UB, LB). It is particularly well suited for use in high-density high-speed system applications. The S6R8016W1A and S6R8008W1A are packaged in a 400mil 44-pin TSOP2 and 48FBGA. The S6R8016C1A and S6R8008C1A are packaged in a 400mil 44-pin TSOP2. 8Mb Asynchronous FAST SRAM Ordering Information (512Kx16) Density Org.