NETSOL S6R8008W1M
The S6R8016(V/C/W)1M and S6R8008(V/C/W))1M are a 8,388,608-bit high-speed Static Random Access Memory organized as 512K (1M) words by 16(8) bits. The S6R8016(V/C/ W)1M (S6R8008(V/C/W)1M) uses 16(8) common input and output lines and have an output enable pin which operates faster than address access time at read cycle. The device is fabricated using advanced CMOS process,6-TR based cell technology and designed for high-speed circuit technology.| Part No. | S6R8008W1M |
|---|---|
| Datasheet | S6R8008W1M Download |
| Manufacturer | NETSOL |
| Description | 8M Async FAST SRAM |
| Buy | Stock & Price |
FEATURES
● Fast Access Time : 10, 15ns(Max)● CMOS Low Power Dissipation Standby (TTL) : 35mA (Max.) (CMOS) : 28mA (Max.) Operating : 90mA (10ns, Max.) 70mA (15ns, Max.)
● Single 3.3 ±0.3V or 5.0 ±0.5V Power Supply - S6R80xxV1M : 3.3 ±0.3V Power Supply - S6R80xxC1M : 5.0 ±0.5V Power Supply
● Wide range of Power Supply - S6R80xxW1M : 1.65V ~ 3.6V Power Supply
● TTL Compatible Inputs and Outputs
● Fully Static Operation, No Clock or Refresh required
● Three State Outputs
● Data Byte Control(x16 Mode) LB : I/O0~ I/O7, UB : I/O8~ I/O15
● Standard 44 TSOP2 Package Pin Configuration
● Operating in Commercial and Industrial Temperature range.
GENERAL DESCRIPTION
And S6R8016(V/ C/W)1M allows that lower and upper byte access by data byte control(UB, LB). It is particularly well suited for use in high-density high-speed system applications. The S6R8016(V/C/W)1M and S6R8008(V/C/W)1M are packaged in a 400mil 44-pin TSOP(II). 8Mb Asynchronous FAST SRAM Ordering Information Density Org. Vcc (V) Spee...
