Nihon Inter Electronics 11EFS4
Low Forward Voltage drop Diode
FEATURES
* Miniature Size * Ultra-Fast Recovery * Low Forward Voltage Drop * Low Power Loss, High Efficiency * High Surge Capability * 200 Volts through 400 Volts Types Available * 26mm and 52mm Inside Tape Spacing OUTLINE DRAWINGMAXIMUM RATINGS
Approx Net Weight:0.17g Rating Repetitive Peak Reverse Voltage Non-repetitive Peak Reverse Voltage Symbol VRRM VRSM Average Rectified Output Current IO RMS Forward Current Surge Forward Current Operating JunctionTemperature Range Storage Temperature Range IF(RMS) IFSM Tjw Tstg 11EFS4 Unit 400 440 0.8 Ta=30°C Without Fin ∗1 50Hz Half Sine 1 Ta=24°C P.C.B.Mounted∗2 WaveResistive Load 1.57 30 50Hz Half Sine Wave,1cycle,Non-repetitive V V A A A - 40 to + 150 °C - 40 to + 150 °C Electrical● Thermal Characteristics Characteristics Symbol Conditions Peak Reverse Current IRM Tj= 25°C, VRM= VRRM Peak Forward Voltage VFM Tj= 25°C, IFM= 1 A Reverse Recovery Time trr IFM= 1 A, -di/dt= 50 A/µs, Ta= 25°C Thermal Resistance Rth(j-a) Junction to Ambient Without Fin,PCB P.C.Board Mounted ∗1 ∗2 ∗1 Without Fin or P.C.Board Min Typ ---- -- Max 20 1.25 30 140 110 Unit µA V ns °C/W ∗2 P.C.