Nihon Inter Electronics C10T03QL
Schottky Barrier Diode
FEATURES
*SQUARE-PAK TO-263AB(SMD) Packaged in 24mm Tape and Reel *Dual Diodes – Cathode Common *Low Forward Voltage Drop *High Surge Capability *Tj=150 °C operation OUTLINE DRAWINGMAXIMUM RATINGS
Rating Repetitive Peak Reverse Voltage Repetitive Peak Surge Reverse Voltage Average Rectified Output Current RMS Forward Current Surge Forward Current Operating JunctionTemperature Range Storage Temperature Range Symbol VRRM VRRSM IO IF(RMS) IFSM Tjw Tstg Approx Net Weight: 1.4g C10T03QL 30 35(pulse width ≤ 1µs duty ≤ 1/50) 10 Tc=116°C 50 Hz Full Sine Wave Resistive Load 11.1 120 50Hz Full Sine Wave ,1cycle Non-repetitive -40 to +150 -40 to +150 Unit V V A A A °C °C Electrical● Thermal Characteristics Characteristics Peak Reverse Current Peak Forward Voltage Thermal Resistance Symbol Conditions IRM VFM Tj= 25°C, VRM= VRRM per arm Tj= 25°C, IFM= 5 A per arm Rth(j-c) Junction to Case Min. Typ. Max. Unit - - 5 mA - - 0.47 V - - 3