Nihon Inter Electronics C10T40F
Schottky Barrier Diode
| Part No. | C10T40F |
|---|---|
| Datasheet | C10T40F Download |
| Manufacturer |  Nihon Inter Electronics |
| Description | Schottky Barrier Diode |
| Buy | Stock & Price |
FEATURES
* SQUARE-PAK TO263AB Case (SMD) Packaged in 24mm Tape and Reel * Dual Diodes – Cathode Common * Ultra – Fast Recovery * Low Forward Voltage Drop * High Surge Capability * 200 Volts thru 600 Volts Types AvailableMAXIMUM RATINGS
Rating Repetitive Peak Reverse Voltage Non-repetitive Peak Reverse Voltage Average Rectified Output Current RMS Forward Current Surge Forward Current Operating JunctionTemperature Range Storage Temperature Range Symbol VRRM VRSM IO IF(RMS) IFSM Tjw Tstg 80 10 Approx Net Weight:1.4g C10T40F 400 440 50 Hz,Full Sine Wave Tc=112°C Resistive Load 11.1 50 Hz Full Sine Wave,1cycle Non-repetitive - 40 to + 150 - 40 to + 150 Unit V V A A A °C °C Electrical● Thermal Characteristics Characteristics Peak Reverse Current Peak Forward Voltage Reverse Recovery Time Thermal Resistance Symbol IRM VFM Conditions Min. Typ. Max. Unit 30 1.25 45 3 µA V ns °C/W Tj=25°C,VRM=VRRM per Arm Tj=25°C, IFM=5A per Arm IFM= 5 A, trr -di/dt= 50 A/µs, Ta= 25°C Rth(j-c) Junction to Case C_T_ OUTLINE DRAWING (Dimensions in mm) FORWARD CURRENT VS.
