Nihon Inter Electronics C30T04Q
Schottky Barrier Diode
| Part No. | C30T04Q |
|---|---|
| Datasheet | C30T04Q Download |
| Manufacturer |  Nihon Inter Electronics |
| Description | Schottky Barrier Diode |
| Buy | Stock & Price |
FEATURES
*SQUARE-PAK TO-263AB(SMD) Packaged in 24mm Tape and Reel *Dual Diodes – Cathode Common *Low Forward Voltage Drop *High Surge Capability *Tj=150 °C operationMAXIMUM RATINGS
Rating Repetitive Peak Reverse Voltage Average Rectified Output Current RMS Forward Current Surge Forward Current Operating JunctionTemperature Range Storage Temperature Range Approx Net Weight: 1.4g Symbol VRRM IO IF(RMS) IFSM Tjw Tstg 250 30 C30T04Q 40 50 Hz Full Sine Wave Tc=104°C Resistive Load 33.3 50Hz Full Sine Wave ,1cycle Non-repetitive -40 to +150 -40 to +150 Unit V A A A °C °C Electrical● Thermal Characteristics Characteristics Peak Reverse Current Peak Forward Voltage Thermal Resistance Symbol IRM VFM Conditions Tj= 25°C, VRM= VRRM per arm Tj= 25°C, IFM= 15 A per arm Min. Typ. Max. 15 0.55 1.5 Unit mA V °C /W Rth(j-c) Junction to Case C_T_ OUTLINE DRAWING (Dimensions in mm) FORWARD CURRENT VS. VOLTAGE C30T04Q/C30T04Q-11A (per Arm) 100 INSTANTANEOUS FORWARD CURRENT (A) 50 20 Tj=25°C Tj=150°C 10...
